View K7M161835B_6608853.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

512kx36 & 1mx18 flow-through n t ram tm - 1 - K7M161835B k7m163635b rev. 3.0 april 2006 18mb ntram tm specification 100tqfp/165fbga with pb/pb-free (rohs compliant) * samsung electronics reserves the right to change products or specification without notice. information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any license, express or implied, by estoppel or otherwise, to any intellectual property rights in samsung products or technology. all information in this document is provided on as "as is" basis without guarantee or warranty of any kind. 1. for updates or additional information about sams ung products, contact your nearest samsung office. 2. samsung products are not intended for use in life suppor t, critical care, medical, safety equipment, or simi- lar applications where product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procuremen t to which special terms or provisions may apply.
512kx36 & 1mx18 flow-through n t ram tm - 2 - K7M161835B k7m163635b rev. 3.0 april 2006 document title 512kx36 & 1mx18-bit flow through n t ram tm the attached data sheets are prepared and approved by samsung el ectronics. samsung electronics co., ltd. reserve the right to change the specifications. samsung electronics will evaluate and reply to yo ur requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. revision history rev. no. 0.0 0.1 0.2 0.3 0.4 1.0 2.0 3.0 remark advance preliminary preliminary preliminary preliminary final final final history 1. initial document. 1. update the dc current spec(i cc , i sb ) 1. change the isb,isb1,isb2 - isb ; from 120ma to 170ma - isb1 ; from 80ma to 150ma - isb2 ; from 80ma to 130ma 1. remove the 1.8v vdd voltage level 1. remove the -75 speed bin 1. finalize the datasheet 1. add the overshoot timing 1. change ordering information draft date mar. 23. 2004 may. 21. 2004 sep. 21. 2004 oct. 18. 2004 jan. 04. 2004 july 18. 2005 feb. 16. 2006 apr. 04. 2006
512kx36 & 1mx18 flow-through n t ram tm - 3 - K7M161835B k7m163635b rev. 3.0 april 2006 18mb ntram (flow through) ordering informa tion note 1. p(q) [package type] : p-pb free, q-pb 2. c(i) [operating temperature] : c-commercial, i-industrial org. vdd (v) speed (ns) access time (ns) part number rohs avail. 1mx18 3.3/2.5 7.5 6.5 K7M161835B-p(q) 1 c(i) 2 65 512kx36 3.3/2.5 7.5 6.5 k7m163635b-p(q) 1 c(i) 2 65
512kx36 & 1mx18 flow-through n t ram tm - 4 - K7M161835B k7m163635b rev. 3.0 april 2006 512kx36 & 1mx18-bit flow through n t ram tm the k7m163635b and K7M161835B are 18,874,368-bits syn- chronous static srams. the n t ram tm , or no turnaround random access memory uti- lizes all bandwidth in any combination of operating cycles. address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. burst order control must be tied "high or low". asynchronous inputs include the sleep mode enable(zz). output enable controls the outputs at any given time. write cycles are internally self-timed and initiated by the rising edge of the clock input. this feature eliminates complex off-chip write pulse generation and provides increased timing fl exibility for incoming signals. for read cycles, flow-through sram allows output data to simply flow freely from the memory array. the k7m163635b and K7M161835B are implemented with samsung s high performance cmos technology and is avail- able in 100pin tqfp packages. multiple power and ground pins minimize ground bounce. general description features logic block diagram ? v dd = 2.5 or 3.3v +/- 5% power supply. ? byte writable function. ? enable clock and suspend operation. ? single read/write control pin. ? self-timed write cycle. ? three chip enable for simple depth expansion with no data contention . ? a interleaved burst or a linear burst mode. ? asynchronous output enable control. ? power down mode. ? ttl-level three-state outputs. ? 100-tqfp-1420a (lead and lead free package) ? operating in commeical and industrial temperature range. n t ram tm and no turnaround random access memory are trademarks of samsung. we bw x clk cke cs 1 cs 2 cs 2 adv oe zz dqa 0 ~ dqd 7 or dqa 0 ~ dqb 8 address address register control logic a 0 ~a 1 36 or 18 dqpa ~ dqpd buffer data-in register k register burst address counter write control logic control register k a [0:18]or a [0:19] lbo a 2 ~a 18 or a 2 ~a 19 a 0 ~a 1 (x=a,b,c,d or a,b) 512kx36, 1mx18 memory array fast access times parameter sym. -65 unit cycle time t cyc 7.5 ns clock access time t cd 6.5 ns output enable access time t oe 3.5 ns
512kx36 & 1mx18 flow-through n t ram tm - 5 - K7M161835B k7m163635b rev. 3.0 april 2006 pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) nc/dqpc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 vss v dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 nc/dqpd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb/nc dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa/nc 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 a 6 a 7 cs 1 cs 2 bw d bw c bw b bw a cs 2 v dd v ss clk we cke oe adv a 18 a 17 a 8 81 a 9 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 a 16 a 15 a 14 a 13 a 12 a 11 a 10 n.c. n.c. v dd v ss n.c. n.c. a 0 a 1 a 2 a 3 a 4 a 5 31 lbo pin name notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address fiel d and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 18 adv we clk cke cs 1 cs 2 cs 2 bw x(x=a,b,c,d) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37,44 45,46,47,48,49,50,81 82,83,84,99,100 85 88 89 87 98 97 92 93,94,95,96 86 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d or nc v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,16,41,65,91 14,17,40,66,67,90 38,39,42,43 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 k7m163635b(512kx36) v ss
512kx36 & 1mx18 flow-through n t ram tm - 6 - K7M161835B k7m163635b rev. 3.0 april 2006 pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) n.c. n.c. n.c. v ddq v ssq n.c. n.c. dqb 8 dqb 7 v ssq v ddq dqb 6 dqb 5 v ss v dd v dd v ss dqb 4 dqb 3 v ddq v ssq dqb 2 dqb 1 dqb 0 n.c. v ssq v ddq n.c. n.c. n.c. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 a 10 n.c. n.c. v ddq v ssq n.c. dqa 0 dqa 1 dqa 2 v ssq v ddq dqa 3 dqa 4 v ss v ss v dd zz dqa 5 dqa 6 v ddq v ssq dqa 7 dqa 8 n.c. n.c. v ssq v ddq n.c. n.c. n.c. 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 a 6 a 7 cs 1 cs 2 bw b bw a cs 2 v dd v ss clk we cke oe adv a 19 a 18 a 8 81 a 9 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 a 17 a 16 a 15 a 14 a 13 a 12 a 11 n.c. n.c. v dd v ss n.c. n.c. a 0 a 1 a 2 a 3 a 4 a 5 31 lbo K7M161835B(1mx18) n.c. n.c. pin name notes : 1. a 0 and a 1 are the two least significant bits(lsb) of the address fiel d and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 19 adv we clk cke cs 1 cs 2 cs 2 bw x(x=a,b) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37,44 45,46,47,48,49,50,80 81,82,83,84,99,100 85 88 89 87 98 97 92 93,94 86 64 31 v dd v ss n.c. dqa 0 ~a 8 dqb 0 ~b 8 v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs output power supply (2.5v or 3.3v) output ground 15,16,41,65,91 14,17,40,66,67,90 1,2,3,6,7,25,28,29,30, 38,39,42,43,51,52,53, 56,57,75,78,79,95,96 58,59,62,63,68,69,72,73,74 8,9,12,13,18,19,22,23,24 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76
512kx36 & 1mx18 flow-through n t ram tm - 7 - K7M161835B k7m163635b rev. 3.0 april 2006 function description the k7m163635b and K7M161835B are n t ram tm designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, or vice versa. all inputs (with the exception of oe , lbo and zz) are synchronized to rising clock edges. all read, write and deselect cy cles are initiated by the adv input. subsequent burst addresses can be internally generated by t he burst advance pin (adv). adv should be driven to low once the de vice has been deselected in order to load a new address for nex t operation. clock enable(cke ) pin allows the operation of the chip to be suspended as long as necessary. when cke is high, all synchronous inputs are ignored and the internal device regi sters will hold their previous values. n t ram tm latches external address and initiates a cycle, when cke , adv are driven to low and all three chip enables(cs 1 , cs 2 , cs 2 ) are active . output enable(oe ) can be used to disable the output at any given time. read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in th e address register, cke is driven low, all three chip enables(cs 1 , cs 2 , cs 2 ) are active, the write enable input signals we are driven high, and adv driven low. data appears at the outputs within the sa me clock cycle as the address for the data. also during read operation oe must be driven low for the device to drive out the requested data. write operation occurs when we is driven low at the rising edge of the clock. bw [d:a] can be used for byte write operation. the flow through n t ram tm uses a late write cycle to utilize 100% of the bandwidth. at the first rising edge of the clock, we and address are registered, and the data asso ciated with that address is required one cycle later. subsequent addresses are generated by adv high for the burst acce ss as shown below. the starti ng point of the burst seguence is provided by the external address. the burst address counter wraps around to its initial state upon completion. the burst sequence is determined by the state of the lbo pin. when this pin is low, linear burst sequence is selected. and when this pin is high, inte rleaved burst sequence is selected. during normal operation, zz must be driven low. when zz is driv en high, the sram will enter a power sleep mode after 2 cycles. at this time, internal state of the sram is pr eserved. when zz returns to low, the sram normally operates after 2 cycles of wake u p time. burst sequence table (interleaved burst, lbo =high) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst, lbo =low) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0
512kx36 & 1mx18 flow-through n t ram tm - 8 - K7M161835B k7m163635b rev. 3.0 april 2006 state diagram for n t ram tm begin write burst write begin read write d s r e a d burst read d s w r i t e d s read d s re a d ds wr i t e burst deselect b u r st r ea d b u r s t w r i t e read write burst burst notes : 1. an ignore clock edge cycle is not shown is the above diagra m. this is because cke high only blocks the clock(clk) input and does not change the state of the device. 2. states change on the rising edge of the clock(clk) command action ds deselect read begin read write begin write burst begin read begin write continue deselect
512kx36 & 1mx18 flow-through n t ram tm - 9 - K7M161835B k7m163635b rev. 3.0 april 2006 synchronous t ruth table notes : 1. x means "don t care". 2. the rising edge of clock is symbolized by ( ). 3. a continue deselect cycle can only be ent erd if a deselect cyc le is executed first. 4. write = l means write operation in write truth table. write = h means read operation in write truth table. 5. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adv we bw x oe cke clk address accessed operation hxxlxxx l n/a not selected xlxlxxx l n/a not selected xxhlxxx l n/a not selected xxxhxxx l n/a not selected continue lhllhxl l external address begin burst read cycle xxxhxxl l next address continue burst read cycle lhllhxh l external address nop/dummy read xxxhxxh l next address dummy read lhllllx l external address begin burst write cycle xxxhxlx l next address continue burst write cycle lhlllhx l n/a nop/write abort xxxhxhx l next address write abort xxxxxxx h current address ignore clock write truth table ( x36) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( ). we bw a bw b bw c bw d operation hxxxx read l l h h h write byte a l h l h h write byte b l h h l h write byte c l h h h l write byte d lllll write all bytes lhhhh write abort/nop truth tables write truth table (x18) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( ). we bw a bw b operation h x x read l l h write byte a l h l write byte b l l l write all bytes l h h write abort/nop
512kx36 & 1mx18 flow-through n t ram tm - 10 - K7M161835B k7m163635b rev. 3.0 april 2006 asynchronous truth table operation zz oe i/o status sleep mode h x high-z read ll dq l h high-z write l x din, high-z deselected l x high-z notes 1. x means "don t care". 2. sleep mode means power sleep mode of which stand-by current does not depend on cycle time. 3. deselected means power sleep mode of which stand-by current depends on cycle time. absolute maximum ratings* *notes : stresses greater than those listed under "absolute maximum rati ngs" may cause permanent damage to the device. this is a stres s rating only and functional operation of the device at these or any other cond itions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating condi tions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on any other pin relative to v ss v in -0.3 to v dd +0.3 v power dissipation p d 1.6 w storage temperature t stg -65 to 150 c operating temperature commercial t opr 0 to 70 c industrial t opr -40 to 85 c storage temperature range under bias t bias -10 to 85 c capacitance* (t a =25 c, f=1mhz) *note : sampled not 100% tested. parameter symbol test condition min max unit input capacitance c in v in =0v - 5 pf output capacitance c out v out =0v - 6 pf operating conditions (0 c t a 70 c) notes: 1. the above parameters are also guaranteed at industrial temperature range. 2. it should be v ddq v dd parameter symbol min typ. max unit supply voltage v dd1 2.375 2.5 2.625 v v ddq1 2.375 2.5 2.625 v v dd2 3.135 3.3 3.465 v v ddq2 3.135 3.3 3.465 v ground v ss 000v v ddq v il v ddq +1.0v 20% t cyc (min) v ss v ih v ss -1.0v 20% t cyc (min) undershoot timing overshoot timing v ddq +0.5v v ss -0.5v
512kx36 & 1mx18 flow-through n t ram tm - 11 - K7M161835B k7m163635b rev. 3.0 april 2006 dc electrical characteristics notes : 1. the above parameters are also guaranteed at industrial temperature range. 2. reference ac operating c onditions and characteristics for input and timing. 3. data states are all zero. 4. in case of i/o pins, the max. v ih =v ddq +0.3v. parameter symbol test conditions min max unit notes input leakage current(except zz) i il v dd =max ; v in =v ss to v dd -2 +2 a output leakage current i ol output disabled, -2 +2 a operating current i cc device selected, i out =0ma, zz v il , cycle time t cyc min -65 - 300 ma 1,2 standby current i sb device deselected, i out =0ma, zz v il , f=max, all inputs 0.2v or v dd -0.2v -65 - 170 ma i sb1 device deselected, i out =0ma, zz 0.2v, f=0, all inputs=fixed (v dd -0.2v or 0.2v) -150ma i sb2 device deselected, i out =0ma, zz v dd -0.2v, f=max, all inputs v il or v ih -130ma output low voltage(3.3v i/o) v ol i ol =8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh =-4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol =1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh =-1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.3* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.3** v 3 input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.3** v 3 test conditions * the above parameters are also guaranteed at industrial temperature range. parameter value input pulse level(for 3.3v i/o) 0 to 3.0v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 20% to 80% for 3.3/2.5v i/o) 1.0v/ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1
512kx36 & 1mx18 flow-through n t ram tm - 12 - K7M161835B k7m163635b rev. 3.0 april 2006 ac timing characteristics notes : 1. the above parameters are also guaranteed at industrial temperature range. 2. all address inputs must meet the specified se tup and hold times for all rising clock(clk) edges when adv is sampl ed low and cs is sampled low. all other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 3. chip selects must be valid at each rising edge of clk(when adv is low) to remain enabled. 4. a write cycle is defined by we low having been registerd into the device at adv low, a read cycle is defined by we high with adv low, both cases must meet setup and hold times. 5. to avoid bus contention, at a given vlotage and temperature t lzc is more than t hzc. the soecs as shown do not imply bus contention because t lzc is a min. parameter that is worst case at totally different test conditions (0 c,3.465v) than t hzc , which is a max. parameter(worst case at 70 c,3.135v) it is not possible for two srams on the same board to be at such different voltage and temperatue. parameter symbol -65 unit min max cycle time t cyc 7.5 - ns clock access time t cd -6.5ns output enable to data valid t oe -3.5 ns clock high to output low-z t lzc 2.5 - ns output hold from clock high t oh 2.5 - ns output enable low to output low-z t lzoe 0-ns output enable high to output high-z t hzoe -3.5 ns clock high to output high-z t hzc -3.8ns clock high pulse width t ch 2.5 - ns clock low pulse width t cl 2.5 - ns address setup to clock high t as 1.5 -ns cke setup to clock high t ces 1.5 -ns data setup to clock high t ds 1.5 -ns write setup to clock high (we , bw x )t ws 1.5 -ns address advance setup to clock high t advs 1.5 -ns chip select setup to clock high t css 1.5 -ns address hold from clock high t ah 0.5 - ns cke hold from clock high t ceh 0.5 - ns data hold from clock high t dh 0.5 - ns write hold from clock high (we , bw x )t wh 0.5 - ns address advance hold from clock high t advh 0.5 - ns chip select hold from clock high t csh 0.5 - ns zz high to power down t pds 2 - cycle zz low to power up t pus 2 - cycle output load(b), (for t lzc , t lzoe , t hzoe & t hzc ) dout 353 ? / 1538 ? 5pf* +3.3v for 3.3v i/o 319 ? / 1667 ? fig. 1 * including scope and jig capacitance output load(a) dout zo=50 ? rl=50 ? vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o
512kx36 & 1mx18 flow-through n t ram tm - 13 - K7M161835B k7m163635b rev. 3.0 april 2006 sleep mode sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to i sb2 . the duration of sleep mode is dictated by the length of time the zz is in a high state. after entering sleep mode, all inputs except zz become disabled and all outputs go to high-z the zz pin is an asynchronous, active high input that causes the device to enter sleep mode. when the zz pin becomes a logic high, i sb2 is guaranteed after the time t zzi is met. any operation pending when entering sleep mode is not guaranteed to successful complete. therefore, sl eep mode (read or write) must not be initiated until valid pend- ing operations are completed. similarly, when exiting sleep mode during t pus , only a deselect or read cycle should be given while the sram is transitioning out of sleep mode. sleep mode electrical characteristics description conditions symbol min max units current during sleep mode zz v ih i sb2 130 ma zz active to input ignored t pds 2 cycle zz inactive to input sampled t pus 2 cycle zz active to sleep current t zzi 2 cycle zz inactive to exit sleep current t rzzi 0 k t pds zz setup cycle t rzzi zz isupply all inputs (except zz) outputs (q) t zzi t pus zz recovery cycle deselect or read only high-z don t care i sb2 sleep mode waveform normal operation cycle deselect or read only
512kx36 & 1mx18 flow-through n t ram tm - 14 - K7M161835B k7m163635b rev. 3.0 april 2006 clock cke address write cs adv oe data out timing waveform of read cycle notes : write = l means we = l, and bw x = l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l t ch t cl t ces t ceh t as t ah a1 a2 a3 t ws t wh t css t csh t oe t hzoe t lzoe t cd t oh t hzc q3-4 q3-3 q3-2 q3-1 q2-4 q2-3 q2-2 q2-1 q1-1 don t care undefined t cyc t advs t advh
512kx36 & 1mx18 flow-through n t ram tm - 15 - K7M161835B k7m163635b rev. 3.0 april 2006 timing waveform of wrte cycle clock address write cs adv data in t ch t cl a2 a3 d2-1 d1-1 d2-2 d2-3 d2-4 d3-1 d3-2 d3-3 oe data out t ds t dh t hzoe don t care undefined t cyc cke a1 t ces t ceh notes : write = l means we = l, and bw x = l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l q0-4 d3-4
512kx36 & 1mx18 flow-through n t ram tm - 16 - K7M161835B k7m163635b rev. 3.0 april 2006 timing waveform of single read/write clock address write cs adv oe data in t ch t cl t ds t dh data out a2 a4 a5 d2 t oe t lzoe q1 don t care undefined t cyc cke t ces t ceh a1 a3 a7 a6 q3 q4 q6 d5 notes : write = l means we = l, and bw x = l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l q7
512kx36 & 1mx18 flow-through n t ram tm - 17 - K7M161835B k7m163635b rev. 3.0 april 2006 timing waveform of cke operation clock address write cs adv oe data in t ch t cl data out a1 a2 a3 a4 a5 t ces t ceh don t care undefined t cyc cke t ds t dh d2 q3 q4 q1 notes : write = l means we = l, and bw x = l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l t cd t lzc t hzc
512kx36 & 1mx18 flow-through n t ram tm - 18 - K7M161835B k7m163635b rev. 3.0 april 2006 timing waveform of cs operation clock address write cs adv oe data in t ch t cl data out a1 a2 a3 a4 a5 don t care undefined t cyc cke d5 q4 t ces t ceh q1 q2 t oe t lzoe d3 t cd t lzc notes : write = l means we = l, and bw x = l cs = l means cs 1 = l, cs 2 = h and cs 2 = l cs = h means cs 1 = h, or cs 1 = l and cs 2 = h, or cs 1 = l, and cs 2 = l t hzc t dh t ds
512kx36 & 1mx18 flow-through n t ram tm - 19 - K7M161835B k7m163635b rev. 3.0 april 2006 package dimensions 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a (lead and lead free package) 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 units ; millimeters/inches

▲Up To Search▲

Price & Availability of K7M161835B

	To Download K7M161835B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .